Interaction of hot electrons with Carbon doped GaN buffer in AlGaN/GaN HEMTs: Correlation with lateral electric field and device failure

Chaudhuri, RR and Joshi, V and Gupta, SD and Shrivastava, M (2020) Interaction of hot electrons with Carbon doped GaN buffer in AlGaN/GaN HEMTs: Correlation with lateral electric field and device failure. In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 13 - 18 September 2020, Virtual, Online, pp. 341-344.

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Abstract

Device design and technology parameter dependent critical voltage governing interaction of hot electrons with traps in Carbon doped GaN buffer is reported in this work. A mechanism controlling trapping of hot electrons in GaN buffer is proposed corroborating well with the experimental observations. Further, reliability of devices operating beyond critical voltage is analyzed using post failure FESEM and gate leakage analysis.

Item Type:	Conference Paper
Publication:	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Aluminum gallium nitride; Carbon; Electric fields; Failure (mechanical); High electron mobility transistors; Hot electrons; III-V semiconductors; Integrated circuits; Outages; Reliability analysis; Wide band gap semiconductors, AlGaN/GaN HEMTs; Critical voltages; Device design; Device failures; GaN buffer; Gate leakages; Lateral electric field, Gallium nitride
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	14 Feb 2023 08:52
Last Modified:	14 Feb 2023 08:52
URI:	https://eprints.iisc.ac.in/id/eprint/80238

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