3D TCAD studies of snapback driven failure in punch-through TVS diodes under system level esd stress conditions

Jhnanesh Somayaji, B and Monishmurali, M and Ajay Singh, N and Kranthi, K and Shrivastava, M (2020) 3D TCAD studies of snapback driven failure in punch-through TVS diodes under system level esd stress conditions. In: Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 13 - 18 September, Reno.

PDF EOS-ESD_2020.pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy

Abstract

–This paper explains the ESD failure dynamics of TVS diode, reported for the first time. The failure is universal to TVS diode structure designed as ESD protecting element. This work gives the detailed physical insights into failure mechanisms, using 2D & 3D TCAD simulations. Failure at very low currents due to non-uniform bipolar turn on, for longer pulse duration, is explained. 2D simulation shows the non -uniformity due to current crowding while 3D simulation supports the failure dependency with thermally driven filamentation. Finally, three device engineering schemes are proposed to improve the phenomena of low current ESD failure under longer pulse duration, through which non-uniform bipolar turn–on is limited.

Item Type:	Conference Paper
Publication:	Electrical Overstress/Electrostatic Discharge Symposium Proceedings
Publisher:	ESD Association
Additional Information:	The copyright for this article belongs to ESD Association.
Keywords:	Diodes; Electronic design automation; Electrostatic devices; Electrostatic discharge, Current crowding; Device engineering; Failure dependency; Failure dynamics; Failure mechanism; Non-uniformities; System-level ESD; Thermally driven, Failure (mechanical)
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	14 Feb 2023 08:40
Last Modified:	14 Feb 2023 08:40
URI:	https://eprints.iisc.ac.in/id/eprint/80231

Actions (login required)

View Item