2D nano materials for CMOS compatible gas sensors

Jha, RK and Sakhuja, N and Bhat, N (2019) 2D nano materials for CMOS compatible gas sensors. In: 34th Symposium on Microelectronics Technology and Devices, SBMicro 2019, 26 August 2019through 30 August 2019, Sao Paulo.

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Abstract

Among the 2D materials family, the Transition Metal Dichalcogenides (TMD) offer interesting opportunities for application in chemi-resistive gas sensors. Along with high surface to volume ratio, an ideal characteristic for surface adsorption driven gas sensing phenomenon, TMDs lend themselves for wide range of tunability of other important parameters such as bandgap and conductivity. In order to build CMOS compatible gas sensors for system-on-chip applications, it is also important to develop low temperature processes for the integration of sensing materials at the back end of the CMOS line. In this context liquid exfoliation of 2D TMD materials can be exploited for room temperature synthesis of sensing material on top of CMOS platform. We present high performance gas sensors realized using few layer WS2 and MoSe22 for NH3 and H2S gases respectively. © 2019 IEEE.

Item Type:	Conference Paper
Publication:	SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Ammonia; Chemical sensors; CMOS integrated circuits; Gas detectors; Microelectronics; Selenium compounds; System-on-chip; Temperature; Transition metals; Tungsten compounds, High surface-to-volume ratio; Liquid exfoliations; Low- temperature process; MoSe2; Resistive gas sensors; Room temperature synthesis; System on Chip application; Transition metal dichalcogenides (TMD), Gases
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	07 Jan 2023 08:09
Last Modified:	07 Jan 2023 08:09
URI:	https://eprints.iisc.ac.in/id/eprint/78870

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