Growth temperature influenced electrical properties of copper-oxide thin films

Sathish, S and Shaik, H and Rafi, SM and Madhavi, P and Kosuri, YR and Sattar, SA and Kumar, KN (2019) Growth temperature influenced electrical properties of copper-oxide thin films. In: International Conference on Trends in Material Science and Inventive Materials, ICTMIM 2019, 28 March 2019 - 29 March 2019, Coimbatore.

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Abstract

opper-o xide thin films are deposited by using reactive magnetron sputtering at different te mperatures and investigated the variation in the bonding configuration. We in -turn investigated how this bonding configuration influences its optical and electrica l properties such as bandgap, resistivity mobility etc. Even the room te mperature (RT) deposited films are crystalline in nature. Bandgap of 2.3 e V has been observed for the films deposited at 400°C. A decreasing trend was observed in hole concentration fro m 2×101 8 to 7×101 6 per cm 3 with increase in substrate temperature from RT to 400°C. XPS investigations were also done to understand the bonding behavior.

Item Type:	Conference Paper
Publication:	AIP Conference Proceedings
Publisher:	American Institute of Physics Inc.
Additional Information:	The copyright for this article belongs to American Institute of Physics Inc.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	27 Dec 2022 05:28
Last Modified:	27 Dec 2022 05:28
URI:	https://eprints.iisc.ac.in/id/eprint/78574

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