Record-high thermal stability achieved in a novel single-component all-organic ferroelectric crystal exhibiting polymorphism

Dutta, S and Vikas, V and Yadav, A and Boomishankar, R and Bala, A and Kumar, V and Chakraborty, T and Elizabeth, S and Munshi, P (2019) Record-high thermal stability achieved in a novel single-component all-organic ferroelectric crystal exhibiting polymorphism. In: Chemical Communications, 55 (65). pp. 9610-9613.

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Abstract

Traditionally, lead and heavy metal containing inorganic oxides dominate the area of ferroelectricity. Although, recently, lightweight non-toxic organic ferroelectrics have emerged as excellent alternatives, achieving higher temperature up to which the ferroelectric phase can persist has remained a challenge. Moreover, only a few of those are single-component molecular ferroelectrics and were discovered upon revisiting their crystal structures. Here we report a novel phenanthroimidazole derivative, which not only displays notable spontaneous and highly stable remnant polarizations with a low coercive field but also retains its ferroelectric phase up to a record-high temperature of ∼521 K. Subsequently, the crystal undergoes phase transition to form non-polar and centrosymmetric polymorphs, the first study of its kind in a single-component ferroelectric crystal. Moreover, the compound exhibits a significantly high thermal stability. Given the excellent figures-of-merit for ferroelectricity, this material is likely to find potential applications in microelectronic devices pertaining to non-volatile memory.

Item Type:	Journal Article
Publication:	Chemical Communications
Publisher:	Royal Society of Chemistry
Additional Information:	The copyright for this article belongs to the Royal Society of Chemistry.
Keywords:	article; crystal; genetic association; high temperature; memory; phase transition; polarization; thermostability
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	07 Dec 2022 07:11
Last Modified:	07 Dec 2022 07:11
URI:	https://eprints.iisc.ac.in/id/eprint/78287

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