Singha, MK and Deepa, KG (2019) Band gap tailoring and raman studies of mn doped zno thin film deposited by ultrasonic spray pyrolysis. In: 19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017, 11 - 15 December 2017, New Delhi, pp. 535-540.
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Abstract
The pristine and Mn doped ZnO thin films are deposited using low cost ultrasonic spray pyrolysis system at different temperatures (400, 450 and 500 °C). The doping concentration of Mn was varied from 2 to 20% in the film. The deposition temperature has no effect on band gap of 5% Mn doped ZnO and it is found to be *3.27 eV for different deposition temperatures. The deposition temperature is found to affect the band gap of undoped ZnO and it decreases from 3.21 to 2.93 eV with increase in deposition temperature. This is due to compressive stress relaxation in the films. The transmittance of Mn doped ZnO thin films increases in the visible region. Raman spectra shows that Mn doped ZnO has broad band in the range of 500–600 cm−1 and second order vibration is more prominent in Mn doped ZnO film with broadening of the E2 peak because of scattering geometries.
Item Type: | Conference Paper |
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Publication: | Springer Proceedings in Physics |
Publisher: | Springer Science and Business Media, LLC |
Additional Information: | The copyright for this article belongs to Springer Science and Business Media, LLC. |
Keywords: | Deposition; Energy gap; II-VI semiconductors; Metallic films; Optical films; Semiconductor devices; Semiconductor doping; Spray pyrolysis; Stress relaxation; Wide band gap semiconductors; Zinc oxide, Deposition temperatures; Doping concentration; Mn-doped ZnO thin films; Raman studies; Scattering geometries; Second orders; Ultrasonic spray pyrolysis; Visible region, Thin films |
Department/Centre: | Division of Interdisciplinary Sciences > Interdisciplinary Centre for Energy Research Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics Division of Physical & Mathematical Sciences > Physics |
Date Deposited: | 23 Nov 2022 05:15 |
Last Modified: | 23 Nov 2022 05:15 |
URI: | https://eprints.iisc.ac.in/id/eprint/77980 |
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