Kagatikar, S and Sunil, D and Kekuda, D and Satyanarayana, MN and Kulkarni, SD and Karkera, C (2022) Boronic Acid-Based n-Type Semiconductor for Electronic Device Application. In: Journal of Electronic Materials .
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Abstract
Electron transporting, or n-type, semiconductors can serve as charge-transport materials, and are ideal for use in organic electronic devices. Boron-based small organic molecules have garnered immense research attention as the heteroatom can effectively alter the electronic structures leading to excellent photophysical and electrochemical properties. A luminescent Schiff base (E)-(4-((2-(2-hydroxybenzoyl)hydrazono)methyl)phenyl)boronic acid (SHB) was prepared by a one-pot condensation reaction between salicyloyl hydrazide and formylphenylboronic acid. The synthesized molecule was chemically characterized by infrared spectroscopy, nuclear magnetic resonance spectroscopy, and mass spectrometry. The blue-emitting boronic acid-derived molecule displayed intramolecular charge transfer, high carrier concentration, good thermal stability, a reversible reduction tendency and formation of uniform amorphous thin films. A diode was successfully fabricated via a solution processing technique with an ideality factor of 7.76. Further, AC conductivity, dielectric constant, dielectric loss, and capacitance values in a frequency range of 10�1000 Hz were extracted from dielectric studies. The dielectric constant of SHB was found to be 9.71 with an AC conductivity of 6.34 � 10�9 Ω�1 cm�1 at 1000 Hz. Graphical Abstract: Figure not available: see fulltext. © 2022, The Author(s).
Item Type: | Journal Article |
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Publication: | Journal of Electronic Materials |
Publisher: | Springer |
Additional Information: | The copyright for this article belongs to the authors. |
Department/Centre: | Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
Date Deposited: | 06 Sep 2022 06:36 |
Last Modified: | 06 Sep 2022 06:36 |
URI: | https://eprints.iisc.ac.in/id/eprint/76448 |
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