High-k YCTO thin films for electronics

Monteduro, AG and Ameer, Z and Rizzato, S and Leo, A and Martino, M and Caricato, AP and Tasco, V and Lekshmi, IC and Hazarika, A and Choudhury, D and Mazzotta, E and Malitesta, C and Sarma, DD and Maruccio, G (2018) High-k YCTO thin films for electronics. In: 2018 International Conference on IC Design and Technology, ICICDT 2018, 4 - 6 June 2018, Otranto, pp. 189-192.

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Abstract

The high permittivity values reported in rare-earth transition metal oxides ceramics makes them very interesting as alternative gate dielectrics. Here, we summarize our recent results on the yttrium copper titanate (YCTO) thin films under different deposition conditions. Their dielectric properties were studied both in metal-oxide-metal (MIM) and in metal-oxide-semiconductor (MOS) junctions for respectively investigating the material response without parasitic substrate contributions and evaluating the YCTO performance as gate oxide. A strongly dependence of the permittivity from deposition conditions was observed, with a variation from 100 down to 24 at 100 kHz. Such behavior was ascribed to film microstructure variations. Notably, at certain deposition conditions, YCTO thin films possess a higher dielectric permittivity than their bulk counterpart (40.3) in addition to good performances in term of losses. These results demonstrate the applicability of YCTO as alternative high-k gate oxides.

Item Type:	Conference Paper
Publication:	ICICDT 2018 - International Conference on IC Design and Technology, Proceedings
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Amorphous films; Amorphous materials; Copper compounds; Deposition; Dielectric devices; Dielectric materials; Gate dielectrics; Gates (transistor); High-k dielectric; Integrated circuits; MOS capacitors; MOS devices; Oxide semiconductors; Permittivity; Rare earths; Semiconductor junctions; Substrates; Thin films; Transition metal oxides; Transition metals; Yttrium compounds, Amorphous oxides; Dielectric characterization; High-k materials; Maxwell-Wagner effect; Universal dielectric response, Thin film circuits
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited:	11 Aug 2022 09:17
Last Modified:	11 Aug 2022 09:17
URI:	https://eprints.iisc.ac.in/id/eprint/75500

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