Pulsed laser deposition for conformal growth of MoS2 on GaN nanorods for highly efficient self-powered photodetection

Singh, DK and Pant, RK and Nanda, KK and Krupanidhi, SB (2022) Pulsed laser deposition for conformal growth of MoS2 on GaN nanorods for highly efficient self-powered photodetection. In: Materials Advances .

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Abstract

Nanostructure-based photodetectors (PDs) have recently attracted intensive attention due to their immense potential in high performance next-generation photonic devices. Herein, we report a self-powered, ultrafast and broadband PD based on conformally grown MoS2 on GaN nanorods (NRs). The higher aspect-ratio and extensively exposed edges of conformal 2D materials provide a large interface for better optical absorption and light harvesting. The device has been realized by the deposition of MoS2 by pulsed laser deposition on GaN NRs/Si grown via molecular beam epitaxy. The MoS2/GaN/Si-based 1D-2D conformal PD exhibits a high photoresponse in a broad range of wavelengths (300-1000 nm) in the self-powered mode. The maximum responsivity of the PD is found to be ∼14.22 A W−1 with ultrafast rise and fall times of 38.8 and 8.2 μs, respectively. Our findings demonstrate that conformal PDs based on the MoS2/GaN NR heterojunction hold promising potential for applications in the field of optoelectronics.

Item Type:	Journal Article
Publication:	Materials Advances
Publisher:	Royal Society of Chemistry
Additional Information:	The copyright for this article belongs to the Authors.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	04 Aug 2022 11:27
Last Modified:	04 Aug 2022 11:27
URI:	https://eprints.iisc.ac.in/id/eprint/75339

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