Normally off AlGaN/GaN FinFET devices on Si substrate

Soman, R and Raghavan, S and Bhat, N (2018) Normally off AlGaN/GaN FinFET devices on Si substrate. In: 4th IEEE International Conference on Emerging Electronics, ICEE 2018, 17 - 19 December 2018, Bengaluru.

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Abstract

A FinFET device architecture is effective in realising normally off operation in AlxGa(1-x)N/GaN HEMTs with low on resistance and increased gate control. This paper discuses simulation and experimental study of normally off AlxGa(1-x)N/GaN FinFET devices. Atlas silvaco simulator is used to carry out electrostatic simulations to demonstrate normally off operation in AlxGa(1-x)N/GaN FinFETs, by considering the tri-gate induced depletion effect on 2DEG. FinFET devices are fabricated with the understanding gained from simulation studies. The fin width, height and length of the fabricated device were 80 nm, 70 nm abd 1.5 μm respectively. The fabricated device exhibited a threshold voltage of 2.5 V with a maximum drain current of 260 mA/mm at a gate overdrive voltage of 2.5 V. A maximum field effect mobility of 130 cm2/Vs is achieved for the fabricated FinFET device.

Item Type:	Conference Paper
Publication:	2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Aluminum gallium nitride; Drain current; Fabrication; Gallium nitride; High electron mobility transistors; III-V semiconductors; Threshold voltage, AlGaN/GaN HEMTs; Depletion effects; Electrostatic simulations; Fabricated device; Field-effect mobilities; Maximum drain current; Normally off; Simulation studies, FinFET
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	29 Jul 2022 11:50
Last Modified:	29 Jul 2022 11:50
URI:	https://eprints.iisc.ac.in/id/eprint/75066

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