Chatterjee, S and Gupta, G and Das, S and Watanabe, K and Taniguchi, T and Majumdar, K (2022) Trion-trion annihilation in monolayer WS2. In: Physical Review B, 105 (12).
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Abstract
Strong Coulomb interaction in monolayer transition metal dichalcogenides can facilitate nontrivial many-body effects among excitonic complexes. Many-body effects such as exciton-exciton annihilation have been widely explored in this material system. However, a similar effect for charged excitons (or trions), that is, trion-trion annihilation (TTA), is expected to be relatively suppressed due to repulsive like-charges, and it has not been hitherto observed in such layered semiconductors. By a gate-dependent tuning of the spectral overlap between the trion and the charged biexciton through an "anticrossing"-like behavior in monolayer WS2, here we present an experimental observation of an anomalous suppression of the trion emission intensity with an increase in gate voltage. The results strongly correlate with time-resolved measurements, and they are inferred as direct evidence of a nontrivial TTA resulting from nonradiative Auger recombination of a bright trion, and the corresponding energy resonantly promoting a dark trion to a charged biexciton state. The extracted Auger coefficient for the process is found to be tunable ten-fold through a gate-dependent tuning of the spectral overlap. © 2022 American Physical Society.
| Item Type: | Journal Article |
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| Publication: | Physical Review B |
| Publisher: | American Physical Society |
| Additional Information: | The copyright for this article belongs to authors. |
| Keywords: | Augers; Excitons; Transition metals; Tungsten compounds, Biexcitons; Charged excitons; Dichalcogenides; Exciton-exciton annihilation; Excitonic complexes; Like charges; Many-body effect; Material systems; Spectral overlap; Trion, Monolayers |
| Department/Centre: | Division of Electrical Sciences > Electrical Communication Engineering |
| Date Deposited: | 17 May 2022 11:07 |
| Last Modified: | 17 May 2022 11:07 |
| URI: | https://eprints.iisc.ac.in/id/eprint/71784 |
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