Influence of deposition conditions on the nature of epitaxial SrIrO3 on STO (001)

Bhat, Shwetha G and Sebastian, Nirmal K and Kumar, P S Anil (2018) Influence of deposition conditions on the nature of epitaxial SrIrO3 on STO (001). In: PHYSICA B-CONDENSED MATTER, 536 . pp. 614-619.

PDF Phy-B_536_614_2018.pdf - Published Version Restricted to Registered users only Download (808kB) | Request a copy

Abstract

SrIrO3 (SIO) is one of the materials known to exhibit a high spin-orbit coupling with correlated semi-metallic ground state, along with the topological states, as proven in recent times. In this regard, the SIO thin films grown by us on SrTiO3 (001) at certain deposition conditions, exhibit a low temperature magneto-transport behavior which is analogous to the materials with topological states. Further, we have explored various deposition conditions of SIO such as partial pressure of O-2 and different temperatures of growth for different thickness of SIO. In addition, from the electrical transport properties, SIO thin films found to exhibit semi-metallic nature with either insulating-like or a crossover from metal-like to insulating-like behavior based on the conditions chosen for the growth. Moreover, the magneto-transport data of various SIO thin films are found to be obeying the usual B-2 (Lorentzian) behavior in majority of the cases. At the same time, we have also observed the weak-localization and weak-antilocalization effects; along with a linear magneto-resistance at low temperature ranges. Thus, from our extensive measurements, it becomes clear that SIO thin films can exhibit wide varieties of magneto-transport properties based on the deposition conditions. Plethora of interesting properties exhibited by the highly spin-orbit coupled SIO epitaxial thin films at lower temperatures in the presence of magnetic field makes the material to be promising for the future applications in the field of spintronics.

Item Type:	Journal Article
Publication:	PHYSICA B-CONDENSED MATTER
Publisher:	ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Additional Information:	Copy right for this article belong to ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	23 May 2018 14:55
Last Modified:	25 Aug 2022 05:09
URI:	https://eprints.iisc.ac.in/id/eprint/59917

Actions (login required)

View Item