Exchange bias effect in Ni50Mn35In15/BiFeO3 heterostructure thin film

Akkera, Harish Sharma and Kaur, Davinder (2018) Exchange bias effect in Ni50Mn35In15/BiFeO3 heterostructure thin film. In: MATERIALS LETTERS, 217 . pp. 64-66.

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Abstract

In this study, we studied the exchange bias (EB) effect in Ni50Mn35In15 and Ni50Mn35In15/BiFeO3 heterostructure thin films deposited onto Pt/Ti/SiO2/Si substrate using dc/rf magnetron sputtering. In pure Ni50Mn35In15 film, the shift of the hysteresis loop from the origin up to 110 Oe was observed at 10 K due to coexistence of FM-AFM interface. On the other hand, the shift of the hysteresis loop was significantly enhanced (480 Oe) in Ni50Mn35In15/BiFeO3 heterostructure thin film at 10 K in field cooled. Further, a high exchange bias field of 80 Oe was found at room temperature in Ni50Mn35In15/BiFeO3 heterostructure thin film. The observed exchange bias field (H-E) in this heterostructure thin film was attributed to the presence of a pinned and uncompensated spins in the antiferromagnetic at the interface, and induced by the interface exchange coupling between Ni50Mn35In15 and BiFeO3. This behaviour is an additional property for the Ni50Mn35In15/BiFeO3 heterostructure thin film to be used in various other magnetic memory devise applications. (C) 2018 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	MATERIALS LETTERS
Publisher:	ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Additional Information:	Copy right for the article belong to ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	14 Mar 2018 17:40
Last Modified:	25 Aug 2022 04:33
URI:	https://eprints.iisc.ac.in/id/eprint/59151

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