Nature of compensating luminescence centers in Te-diffused and -doped GaSb

Dutta, PS and Mendez, B and Piqueras, J and Diegueza, E and Bhat, HL (1996) Nature of compensating luminescence centers in Te-diffused and -doped GaSb. In: Journal of Applied Physics, 80 (2). pp. 1112-1115.

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Abstract

Diffusion of tellurium in undoped p-GaSb has been carried out. Using the cathodoluminescence and photoluminescence techniques, the luminescence centers in Te-diffused samples have been identified and compared with the Te-doped bulk GaSb. Fundamental differences in the radiative levels are observed between the diffused and the as-grown doped samples. Evidence for self-compensating acceptor complexes are seen in diffused samples. With short and moderate diffusion times, a compensating acceptor complex $V_{Ga}Ga_{Sb}Te_{Sb}$ is observed. For long diffusion times, the dominant acceptor center has been attributed to the antisite defect $Ga_{Sb}$ or related complex. The reasons for the formation of various acceptor centers have been discussed.

Item Type:	Journal Article
Publication:	Journal of Applied Physics
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	19 Feb 2007
Last Modified:	19 Sep 2010 04:34
URI:	http://eprints.iisc.ac.in/id/eprint/9410

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