Dutta, PS and Mendez, B and Piqueras, J and Diegueza, E and Bhat, HL (1996) Nature of compensating luminescence centers in Te-diffused and -doped GaSb. In: Journal of Applied Physics, 80 (2). pp. 1112-1115.
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Abstract
Diffusion of tellurium in undoped p-GaSb has been carried out. Using the cathodoluminescence and photoluminescence techniques, the luminescence centers in Te-diffused samples have been identified and compared with the Te-doped bulk GaSb. Fundamental differences in the radiative levels are observed between the diffused and the as-grown doped samples. Evidence for self-compensating acceptor complexes are seen in diffused samples. With short and moderate diffusion times, a compensating acceptor complex $V_{Ga}Ga_{Sb}Te_{Sb}$ is observed. For long diffusion times, the dominant acceptor center has been attributed to the antisite defect $Ga_{Sb}$ or related complex. The reasons for the formation of various acceptor centers have been discussed.
Item Type: | Journal Article |
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Publication: | Journal of Applied Physics |
Publisher: | American Institute of Physics |
Additional Information: | Copyright of this article belongs to American Institute of Physics. |
Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
Date Deposited: | 19 Feb 2007 |
Last Modified: | 19 Sep 2010 04:34 |
URI: | http://eprints.iisc.ac.in/id/eprint/9410 |
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