Inkjet-Printed, High-Performance MoS2 Transistors and Unipolar Logic Electronics

Mondal, SK and Prakasan, L and Kolluru, N and Pradhan, JR and Dasgupta, S (2024) Inkjet-Printed, High-Performance MoS2 Transistors and Unipolar Logic Electronics. In: ACS Applied Materials and Interfaces, 16 . 42392 -42405.

PDF ACS_App_Mat_Int_6_32_14August 2024.pdf - Published Version Restricted to Registered users only Download (9MB) | Request a copy

Abstract

Two-dimensional (2D) semiconductor field-effect film transistors combine large carrier mobility with mechanical flexibility and therefore can be ideally suitable for wearable electronics or at the sensor interfaces of smart sensor systems. However, such applications require large-area solution processing as opposed to single-flake devices, where the critical challenge to overcome is the high interflake resistance values. In this report, using a narrow-channel, near-vertical transport device architecture, we have fabricated inkjet-printed sub-20 nm channel electrolyte-gated transistors with predominantly intraflake carrier transport. Therefore, the electronics transport in these transistors is not dominated by the high interflake resistance, and the intraflake material properties including doping density, defect concentration, contact resistance, and threshold voltage modulation can be examined and optimized independently to achieve a current density as high as 280 μA·μm-1. In addition, through the passivation of the sulfur vacancies with a tailored surface treatment, we demonstrate an impressive On-Off current ratio exceeding 1 � 107, complemented by a low subthreshold swing of 100 mV·decade-1. Next, exploiting these high-performance transistors, unipolar depletion-load-type inverters have been fabricated that show a maximum gain of 31. Furthermore, we have realized NAND, NOR, and OR gates, demonstrating their seamless operation at a frequency of 1 kHz. Therefore, this work represents an important step forward to realize electronic circuits based on printed 2D thin film transistors. © 2024 American Chemical Society

Item Type:	Journal Article
Publication:	ACS Applied Materials and Interfaces
Publisher:	American Chemical Society
Additional Information:	The copyright for this article belongs to the Publisher.
Keywords:	Computer circuits; Electrolytes; Field effect transistors; Layered semiconductors; Molybdenum compounds; Semiconductor doping; Surface treatment; Thin film circuits; Thin film transistors; Threshold voltage, 2d semiconductor; C. thin film transistor (TFT); Electrolyte gating; Ink jet; Ink-jet printing; Performance; Printed electronics; Thin film transistor; Two-dimensional; Unipolar logic electronic, Thin films
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	28 Aug 2024 06:47
Last Modified:	28 Aug 2024 06:47
URI:	http://eprints.iisc.ac.in/id/eprint/86062

Actions (login required)

View Item