Interaction of gold-related and irradiation-induced defects in silicon

Rao, Koteswara KSR and Kumar, V and Premachandran, SK and Raghunath, KP (1991) Interaction of gold-related and irradiation-induced defects in silicon. In: Journal of Applied Physics, 69 (12). pp. 8205-8209.

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Abstract

The evidence of interaction of gold-related defects with irradiation-induced defects in silicon is presented. It is observed that the concentrations of both the gold-related levels increase with increasing dose of irradiation. The linear relation between gold-related acceptor concentration $N_A_u_$ and the divacancy $N_V_-_V_$ suggests that the gold-related level is a gold-divacancy complex rather than gold-vacancy complex.

Item Type:	Journal Article
Publication:	Journal of Applied Physics
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	15 Sep 2006
Last Modified:	19 Sep 2010 04:31
URI:	http://eprints.iisc.ac.in/id/eprint/8548

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