Rao, Koteswara KSR and Kumar, V and Premachandran, SK and Raghunath, KP (1991) Interaction of gold-related and irradiation-induced defects in silicon. In: Journal of Applied Physics, 69 (12). pp. 8205-8209.
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Abstract
The evidence of interaction of gold-related defects with irradiation-induced defects in silicon is presented. It is observed that the concentrations of both the gold-related levels increase with increasing dose of irradiation. The linear relation between gold-related acceptor concentration $N_A_u_$ and the divacancy $N_V_-_V_$ suggests that the gold-related level is a gold-divacancy complex rather than gold-vacancy complex.
Item Type: | Journal Article |
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Publication: | Journal of Applied Physics |
Publisher: | American Institute of Physics |
Additional Information: | Copyright of this article belongs to American Institute of Physics. |
Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
Date Deposited: | 15 Sep 2006 |
Last Modified: | 19 Sep 2010 04:31 |
URI: | http://eprints.iisc.ac.in/id/eprint/8548 |
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