Probing the Origin of Photocurrent in 2D Bilayer MoSe-WSe Lateral Heterostructure

Ray, P and Verma, R and Nyak, B and Chakraborty, SK and Shrivastava, M and Sahoo, PK (2024) Probing the Origin of Photocurrent in 2D Bilayer MoSe-WSe Lateral Heterostructure. In: UNSPECIFIED.

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Abstract

We use a simple and robust water-assisted one-pot CVD method to demonstrate the fabrication of electronic-grade bilayer 2D MoSe2-WSe2 lateral heterostructures (LHS). Using photoluminescence spectroscopy and transport measurements in 2D- LHS-based FET geometry, we evaluated the nature of majority charge carriers, mobility, transconductance, carrier density, diode and phototransistor performance as a function of gate voltage and laser exposure. These 2D LHS with type-II band alignment, precise interface, and atomic thickness present promising avenues for diverse optoelectronic applications. © 2024 IEEE.

Item Type:	Conference Paper
Publication:	IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Carrier mobility; Field effect transistors; Photoluminescence spectroscopy, 2d field effect transistor; 2D fields; 2d semiconductor; Bi-layer; CVD method; Field-effect transistor; Lateral heterostructure; One pot; Simple++; Water assisted, Heterojunctions
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	03 Jun 2024 07:21
Last Modified:	03 Jun 2024 07:21
URI:	https://eprints.iisc.ac.in/id/eprint/85131

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