Robust Growth of Electronic Grade p-type Large Area 2D WSe2 and High-performance PMOS Transistor

Nayak, B and Verma, R and Ray, P and Chakraborty, SK and Shrivastava, M and Sahoo, PK (2024) Robust Growth of Electronic Grade p-type Large Area 2D WSe2 and High-performance PMOS Transistor. In: UNSPECIFIED.

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Abstract

Direct growth of large area WSe2 (1 cm2) with controlled layer number has been demonstrated using a robust and cost-effective water-assisted chemical vapour deposition (CVD) method. Through Raman and PL spectroscopy along with transport measurements, we have evaluated the structural, optical and electrical characteristics of the as-grown WSe2 layers. We have addressed the persistent contact issue for 2D materials, achieving a distinct p-type nature, a vital advancement in the realm of PMOS for CMOS technology integration. Furthermore, device-to-device performance variations are also evaluated, contributing to standardizing the quality of the 2D semiconductors and optimizing growth parameters. © 2024 IEEE.

Item Type:	Conference Paper
Publication:	IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Cost effectiveness; Field effect transistors; Quality control; Selenium compounds; Transition metals, Chemical vapour deposition; Dichalcogenides; Direct growth; Electronic grade; Field-effect transistor; Layer number; P-type; Performance; Robust growth; Transition metal dichalcogenides, Chemical vapor deposition
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	03 Jun 2024 07:29
Last Modified:	03 Jun 2024 07:29
URI:	https://eprints.iisc.ac.in/id/eprint/85130

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