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Optimization of AlN deposition parameters for a high frequency 1D pMUT Array

Prasad, AS and Arora, M (2023) Optimization of AlN deposition parameters for a high frequency 1D pMUT Array. In: 2023 IEEE International Ultrasonics Symposium, IUS 2023, 3 - 8 September 2023, Montreal.

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Official URL: https://doi.org/10.1109/IUS51837.2023.10308370


Aluminium Nitride (AlN) thin films have gained attention due to their exceptional electric, thermal properties, making them suitable for various electronic and optoelectronic applications. RF magnetron sputtering is a widely used technique for depositing AlN thin films, offering precise control over deposition parameters. This paper presents the optimization of RF magnetron sputtering parameters for a piezoelectric AlN thin film growth. The influence of key parameters, including gas ratio, RF power, substrate temperature is investigated. The results: FWHM of 2.4° - 2.6° and a surface roughness of 1.4 nm highlight the significance of process optimization to achieve high-quality piezoelectric AlN thin films, paving the way for their utilization in advanced electronic devices. © 2023 IEEE.

Item Type: Conference Paper
Publication: IEEE International Ultrasonics Symposium, IUS
Publisher: IEEE Computer Society
Additional Information: The copyright for this article belongs to IEEE Computer Society.
Keywords: CMOS integrated circuits; Film growth; III-V semiconductors; Magnetron sputtering; MEMS; Optimization; Piezoelectricity; Surface roughness; Thin films, Aluminum nitride thin films; CMOS; Deposition Parameters; High frequency HF; Nitride deposition; Optimisations; Piezoelectric; PMUT; R.F. magnetron sputtering; RF sputtering, Aluminum nitride
Department/Centre: Division of Mechanical Sciences > Department of Design & Manufacturing (formerly Centre for Product Design & Manufacturing)
Date Deposited: 01 Mar 2024 05:27
Last Modified: 01 Mar 2024 05:27
URI: https://eprints.iisc.ac.in/id/eprint/83780

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