ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Voltage Control of Magnetism: Low-Power Spintronics

Khandelwal, A and Chopdekar, R and Surampalli, A and Tiwari, K and Negi, N and Kalitsov, A and Wan, L and Katine, J and Stewart, D and Santos, T and Huang, Y-L and Ramesh, R and Prasad, B (2023) Voltage Control of Magnetism: Low-Power Spintronics. In: 2023 IEEE International Memory Workshop, IMW 2023, 21 - 24 May 2023, Monterey.

[img] PDF
imw_2023.pdf - Published Version
Restricted to Registered users only

Download (1MB) | Request a copy
Official URL: https://doi.org/10.1109/IMW56887.2023.10145821


Conventional spintronics-based memory devices use an electrical current in elegant ways to control the direction and dynamics of electrons' spin, yet at higher energy cost and lower device endurance. Therefore, keeping pace with the growing demand for faster, smaller, and ultra-low-power electronic devices, research in the field of voltage control of magnetism has intensified recently with the promises to deliver ultra-low-power operating non-volatile memory solutions for next-generation computing systems. Here, we present our recent efforts in voltage-controlled magnetism via different approaches; voltage-controlled magnetic anisotropy (VCMA), voltage-controlled exchange coupling (VCEC), and multiferroic-based magnetoelectric coupling (MEC) for spintronics applications. These studies yielded several new findings. Large tunability of perpendicular magnetic anisotropy (PMA) has been achieved with the insertion of the Pt layer at the MgO/Ferromagnet interface. The modulation of the interlayer exchange coupling with the Ru spacer layer has been demonstrated by using non-ionic liquid gating such as MgO. Besides this, we have also shown the modulation of the magnetism by utilizing the magneto-electric coupling effect in a bismuth ferrite-based multiferroic system. These efforts provide several routes to modulate the resistance states of spintronic devices at low power and bring forth a vast playground to develop next-generation energy-efficient computing devices.

Item Type: Conference Paper
Publication: 2023 IEEE International Memory Workshop, IMW 2023 - Proceedings
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords: Energy efficiency; Ionic liquids; Magnesia; Magnetic anisotropy; Magnetic storage; Spin dynamics, Electrical current; Electron spins; Growing demand; High-energy costs; Low Power; Magnetoelectric couplings; Multiferroics; Power electronic devices; Ultra-low-power electronics; Voltage-controlled, Digital storage
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 25 Jul 2023 09:08
Last Modified: 25 Jul 2023 09:08
URI: https://eprints.iisc.ac.in/id/eprint/82650

Actions (login required)

View Item View Item