Hot wire-CVD grown molybdenum disulfide (MoS2) thin films for photodetector and humidity sensing applications

Pawbake, A and Rondiya, S and Late, D and Prasad, M and Jadkar, S (2023) Hot wire-CVD grown molybdenum disulfide (MoS2) thin films for photodetector and humidity sensing applications. In: Journal of Materials Science: Materials in Electronics, 34 (17).

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Abstract

In the present work, we report the synthesis of a large area of single-crystal MoS2 film using the hot wire-CVD method. The thickness and morphology of the MoS2 thin film were studied using AFM and FESEM. The formation of single crystal and nearly stoichiometric MoS2 nanosheet film was confirmed using Raman spectroscopy, XRD, TEM, and EDAX analysis. The XRD analysis shows that the MoS2 crystallite has a preferred orientation along the (002) direction. Finally, the photodetector and humidity sensing properties of the MoS2-based sensor were investigated at room temperature. The photodetector shows excellent photoresponse with a fast rise time of ~ 0.18 s and decay time of ~ 0.27 s, with high photosensitivity (~ 13.87), photoresponsivity (~ 58.95 μA/W), and photodetectivity (~ 2.01 × 108 Jones). The maximum humidity sensitivity factor of ~ 900% with a response time of ~ 52 s and recovery time of ~ 2 s were observed for the MoS2-based humidity sensor. Our work demonstrates that MoS2 can potentially realize photodetectors and humidity sensors.

Item Type:	Journal Article
Publication:	Journal of Materials Science: Materials in Electronics
Publisher:	Springer
Additional Information:	The copyright for this article belongs to the Springer.
Keywords:	Film thickness; Humidity sensors; Molybdenum disulfide; Morphology; Photodetectors; Photons; Single crystals; Thin films; X ray diffraction, AFM; CVD method; Hot-wire CVD; Humidity sensing; Nanosheet films; Preferred orientations; Sensing applications; Thin-films; XRD; XRD analysis, Layered semiconductors
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	18 Jul 2023 10:42
Last Modified:	18 Jul 2023 10:42
URI:	https://eprints.iisc.ac.in/id/eprint/82462

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