Effect of Light on the p-type Doping of P3HT OFET by Oxygen

Srivastava, S and Ramamurthy, PC (2022) Effect of Light on the p-type Doping of P3HT OFET by Oxygen. In: 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, 11- 14 Dec 2022, Bangalore, India.

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Abstract

Organic electronic devices gained much interest in the last few decades due to their various application in biosensing, gas sensing, photo-sensing, memory device, synaptic devices for neuromorphic computing, flexible electronics application, wearable device, LED, and OPV. Despite all these various applications, organic electronic devices lack behind their inorganic counterpart because of their poor environmental stability. In this study, the effect of light on P3HT OFET was observed in atmospheric conditions. Electrical characteristics showed that p-type doping is high in the presence of light. It was also suggested by the red shift in Raman data and by the change in surface potential after light exposure by Kelvin Probe Force Microscopy analysis.

Item Type:	Conference Paper
Publication:	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the IEEE.
Keywords:	Environmental Stability; OFET; Oxygen Doping
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	28 Jun 2023 09:53
Last Modified:	28 Jun 2023 09:53
URI:	https://eprints.iisc.ac.in/id/eprint/82159

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