Comparing the effect of synthesis techniques on the semiconductor-metal transition of VO2 thin films

Rajeswaran, B and Umarji, AM (2023) Comparing the effect of synthesis techniques on the semiconductor-metal transition of VO2 thin films. In: Materials Letters, 339 .

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Abstract

We compare the effect of two synthesis methods namely Chemical Vapor Deposition (CVD) and Ultrasonic Nebulized Spray Pyrolysis of Aqueous Combustion Mixture (UNSPACM) on the Semiconductor-Metal Transition (SMT) characteristics of VO2 thin films. The SMT characteristics of the films are measured electrically and optically. CVD films show a lower resistance ratio and SMT strength, whereas films synthesized via UNSPACM are rougher. We ascribe the reason for the observed behaviour to morphology and off-stoichiometry arising from the deposition process. © 2023 Elsevier B.V.

Item Type:	Journal Article
Publication:	Materials Letters
Publisher:	Elsevier B.V.
Additional Information:	The copyright for this article belongs to Elsevier B.V.
Keywords:	Morphology; Spray pyrolysis; Thin films; Vanadium dioxide, Chemical vapour deposition; Electrical quality; Low resistance; Optical qualities; Semiconductor-metal transition; Synthesis method; Synthesis techniques; Ultrasonic nebulized spray pyrolysis of aqueous combustion mixtures; Vapor deposition films; VO 2 thin films, Chemical vapor deposition
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	20 Mar 2023 07:05
Last Modified:	20 Mar 2023 07:05
URI:	https://eprints.iisc.ac.in/id/eprint/81008

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