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Inkjet-Printed MoS2 Transistors with Predominantly Intraflake Transport

Mondal, SK and Biswas, A and Pradhan, JR and Dasgupta, S (2021) Inkjet-Printed MoS2 Transistors with Predominantly Intraflake Transport. In: Small Methods, 5 (12).

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Official URL: https://doi.org/10.1002/smtd.202100634


2D semiconductors, such as transition metal dichalcogenides (TMDs) show a rare combination of physical properties that include a large-enough bandgap to ensure sufficient current modulation in transistors, matching electron and hole mobility for complimentary logic operation, and sufficient mechanical flexibility of the nanosheets. Moreover, the solvent-exfoliated TMD-nanosheets may also be processed at low temperatures and onto a wide variety of substrates. However, the poor inter-flake transport in solution-cast 2D-TMD network transistors hinders the realization of high device mobility and current modulations that the intraflake transistors can regularly demonstrate. In this regard, fully printed and electrolyte-gated, narrow-channel MoS2 field-effect transistors (FETs) with simultaneous high current saturation (>310 µA µm−1) and on–off ratio (>106) are proposed here. The transport limitation is overcome by printing an additional metal layer onto the 2D-TMD nanosheet channel, which substantially shortens the effective channel lengths and results in predominant intraflake transport. In addition, a channel-capacitance-modulation induced subthermionic transport is recorded, which leads to a subthreshold slope value as low as 7.5 mV dec−1. On the other hand, thermionic MOSFETs and fully printed depletion-mode NMOS inverters are also presented. The demonstrated generic approach involving chemically exfoliated nanosheet inks and the absolute device yield indicates the feasibility of fully printed 2D-TMD electronics. © 2021 Wiley-VCH GmbH

Item Type: Journal Article
Publication: Small Methods
Publisher: John Wiley and Sons Inc
Additional Information: The copyright for this article belongs to John Wiley and Sons Inc.
Keywords: Electrolytes; Field effect transistors; Hole mobility; Ink jet printing; Layered semiconductors; Modulation; Molybdenum compounds; Nanosheets, 2d semiconductor; Current modulation; Dichalcogenides; Electrons and holes; Field-effect transistor; Ink jet; Ink-jet printing; MoS 2; Transistor matching; Transition metal dichalcogenides, Transition metals
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 25 Feb 2023 07:32
Last Modified: 25 Feb 2023 07:32
URI: https://eprints.iisc.ac.in/id/eprint/80588

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