Tailoring of structural and photoluminescence emissions by Mn and Cu co-doping in 2D nanostructures of ZnS for the visualization of latent fingerprints and generation of white light

Kumbhakar, P and Biswas, S and Pandey, P and Tiwary, CS and Kumbhakar, P (2019) Tailoring of structural and photoluminescence emissions by Mn and Cu co-doping in 2D nanostructures of ZnS for the visualization of latent fingerprints and generation of white light. In: Nanoscale, 11 (4). pp. 2017-2026.

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Abstract

There has been a recent demand for the development of luminescent materials for visualizations of latent fingerprints (LFPs) for achieving enhanced security. Also recently, there has been a new research trend in the development of 2D materials from non-layered semiconductors with strong luminescence properties in the visible region. The conventional growth process of luminescent materials limits their capacity of tuning the structure and light emission efficiency. However, multi-atom doping provides an additional degree of freedom to tune the basic morphologies and optical properties of luminescent semiconductors by controlling the defect levels. Here, by using a simple chemical technique, multi-atom (Cu and Mn) doped rarely reported 2D nanosheets of zinc sulphide (ZnS) have been grown. Thus, a stable high fluorescence efficiency of ∼62% in the visible region has been realized for the visualization of LFPs. Furthermore, near-white light emission has been demonstrated by coating the synthesized materials with a suitable doping concentration on a commercially available UV-LED chip. The proposed technique may be utilized further to build up other 2D nanostructured materials for multifunctional applications in solid state lighting, LFPs and forensic science.

Item Type:	Journal Article
Publication:	Nanoscale
Publisher:	Royal Society of Chemistry
Additional Information:	The copyright for this article belongs to Royal Society of Chemistry.
Keywords:	Copper; Degrees of freedom (mechanics); Efficiency; II-VI semiconductors; Layered semiconductors; Light; Lighting; Manganese; Optical properties; Photoluminescence; Semiconductor doping; Visualization; Wide band gap semiconductors; Zinc sulfide, Doping concentration; Fluorescence efficiency; Light emission efficiency; Luminescent material; Near-white-light emissions; Photoluminescence emission; Solid state lighting; Synthesized materials, Sulfur compounds
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	28 Nov 2022 07:29
Last Modified:	28 Nov 2022 07:29
URI:	https://eprints.iisc.ac.in/id/eprint/78083

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