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In situ Raman monitoring of ultrathin Ge films

Kanakaraju, S and Sood, AK and Mohan, S (1998) In situ Raman monitoring of ultrathin Ge films. In: Journal of Applied Physics, 84 (10). pp. 5756-5760.

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We report the in situ interference enhanced Raman spectroscopy of ultrathin crystalline Ge films grown at $300 ^oC$. The Raman spectra of the films show a peak at $\sim290 cm^{-1}$ attributed to the confined optical phonon and a broadband on the low-frequency side at $\sim254 cm^{-1}$ for 5 and 10 Å thick films. The latter is attributed to disordered surface with large number of dangling bonds. For thicker films, the low-frequency mode appears at $270 cm^{-1}$ assigned to surface optical phonons.

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 07 Jul 2006
Last Modified: 19 Sep 2010 04:29
URI: http://eprints.iisc.ac.in/id/eprint/7801

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