Inkjet-Printed Narrow-Channel Mesoporous Oxide-Based n-Type TFTs and All-Oxide CMOS Electronics

Devabharathi, N and Pradhan, JR and Priyadarsini, SS and Brezesinski, T and Dasgupta, S (2022) Inkjet-Printed Narrow-Channel Mesoporous Oxide-Based n-Type TFTs and All-Oxide CMOS Electronics. In: Advanced Materials Interfaces .

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Abstract

Oxide semiconductors are becoming the materials of choice for modern-day display industries. The performance of solution-processed oxide thin film transistors (TFTs) has also improved dramatically over the last few years. However, while oxygen deficient n-type semiconductors can demonstrate excellent electronic transport, the performance of p-type materials has remained unsatisfactory. Consequently, only the n-type semiconductor-based pseudo-complementary metal oxide semiconductor (CMOS) technology has attracted tremendous interests recently; yet, the high power dissipation remains a problem. Here, this work demonstrates all-oxide CMOS invertors with high-performance narrow-channel n-type TFTs, which can compensate for the limited carrier mobility of the p-type transistors. These n-type TFTs are fabricated with polymer-templated mesoporous In2O3 and with a device geometry that allows near-vertical current transport, thereby rendering the TFT channel lengths to be equal to the semiconductor film thickness (≈50 nm). Unprecedented On-current (1.02 mA µm−1) and transconductance (950 µS µm−1) are achieved. The CuO-based p-type TFTs also show a device mobility of no less than 0.5 cm2 V−1 s−1. The printed all-oxide CMOS inverters are found to operate at very low supply voltages and demonstrate sharp transfer curves with maximum signal gain of 31 and low power dissipation of only 4 nW, at a supply voltage of 1 V.

Item Type:	Journal Article
Publication:	Advanced Materials Interfaces
Publisher:	John Wiley and Sons Inc
Additional Information:	The copyright for this article belongs to John Wiley and Sons Inc.
Keywords:	CMOS integrated circuits; Copper oxides; Dielectric devices; Electric losses; Field effect transistors; Indium compounds; Metals; MOS devices; Oxide semiconductors; Thin film circuits; Thin films, C. thin film transistor (TFT); Complementary metal oxide semiconductor electronic; Complementary metal oxide semiconductors; Ink-jet printing; N-type semiconductors; Narrow channel; Oxide electronics; Performance; Printed electronics; Semiconductor electronics, Thin film transistors
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	30 Aug 2022 12:01
Last Modified:	30 Aug 2022 12:01
URI:	https://eprints.iisc.ac.in/id/eprint/76285

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