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High Operation Frequency and Strain Tolerance of Fully Printed Oxide Thin Film Transistors and Circuits on PET Substrates

Divya, M and Pradhan, JR and Priyadarsini, SS and Dasgupta, S (2022) High Operation Frequency and Strain Tolerance of Fully Printed Oxide Thin Film Transistors and Circuits on PET Substrates. In: Small .

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Official URL: https://doi.org/10.1002/smll.202202891


The major limitations of solution-processed oxide electronics include high process temperatures and the absence of necessary strain tolerance that would be essential for flexible electronic applications. Here, a combination of low temperature (<100 °C) curable indium oxide nanoparticle ink and a conductive silver nanoink, which are used to fabricate fully-printed narrow-channel thin film transistors (TFTs) on polyethylene terephthalate (PET) substrates, is proposed. The metal ink is printed onto the In2O3 nanoparticulate channel to narrow the effective channel lengths down to the thickness of the In2O3 layer and thereby obtain near-vertical transport across the semiconductor layer. The TFTs thus prepared show On/Off ratio ≈106 and simultaneous maximum current density of 172 µA µm−1. Next, the depletion-load inverters fabricated on PET substrates demonstrate signal gain >200 and operation frequency >300 kHz at low operation voltage of VDD = 2 V. In addition, the near-vertical transport across the semiconductor layer is found to be largely strain tolerant with insignificant change in the TFT and inverter performance observed under bending fatigue tests performed down to a bending radius of 1.5 mm, which translates to a strain value of 5%. The devices are also found to be robust against atmospheric exposure when remeasured after a month.

Item Type: Journal Article
Publication: Small
Publisher: John Wiley and Sons Inc
Additional Information: The copyright for this article belongs to the John Wiley and Sons Inc.
Keywords: Bending tests; CMOS integrated circuits; Fatigue testing; Indium compounds; Ink; Ink jet printing; Nanoparticles; Plastic bottles; Substrates; Temperature; Thin film circuits; Thin film transistors; Thin films; Timing circuits, C. thin film transistor (TFT); CMOS inverters; Ink-jet printing; Low process temperature; Operation frequency; Oxide nanoparticles; Printed electronics; Pseudo-CMOS inverter; Strain tolerance; Vertical transports, Flexible electronics
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 04 Aug 2022 11:20
Last Modified: 04 Aug 2022 11:20
URI: https://eprints.iisc.ac.in/id/eprint/75337

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