Sanjay, S and Ganapathi, KL and Varrla, E and Bhat, N (2021) Performance tunability of field-effect transistors using MoS2(1-x)Se2xalloys. In: Nanotechnology, 32 (43).
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Abstract
Ultra-thin channel materials with excellent tunability of their electronic properties are necessary for the scaling of electronic devices. Two-dimensional materials such as transition metal dichalcogenides (TMDs) are ideal candidates for this due to their layered nature and great electrostatic control. Ternary alloys of these TMDs show composition-dependent electronic structure, promising excellent tunability of their properties. Here, we systematically compare molybdenum sulphoselenide (MoS2(1-x)Se2x) alloys, MoS1Se1 and MoS0.4Se1.6. We observe variations in strain and carrier concentration with their composition. Using them, we demonstrate n-channel field-effect transistors (FETs) with SiO2 and high-k HfO2 as gate dielectrics, and show tunability in threshold voltage, subthreshold slope (SS), drain current, and mobility. MoS1Se1 shows better promise for low-power FETs with a minimum SS of 70 mV dec-1, whereas MoS0.4Se1.6, with its higher mobility, is suitable for faster operations. Using HfO2 as gate dielectric, there is an order of magnitude reduction in interface traps and 2� improvement in mobility and drain current, compared to SiO2. In contrast to MoS2, the FETs on HfO2 also display enhancement-mode operation, making them better suited for CMOS applications. © 2021 IOP Publishing Ltd.
| Item Type: | Journal Article |
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| Publication: | Nanotechnology |
| Publisher: | IOP Publishing Ltd |
| Additional Information: | The copyright for this article belongs to IOP Publishing Ltd |
| Keywords: | Carrier concentration; Dielectric materials; Drain current; Electronic properties; Electronic structure; Gate dielectrics; Hafnium oxides; High-k dielectric; Layered semiconductors; Low-k dielectric; Molybdenum compounds; Silica; Silicon; Ternary alloys; Threshold voltage; Transition metals, Electrostatic control; Enhancement modes; Field effect transistor (FETs); Magnitude reduction; Subthreshold slope; Transition metal dichalcogenides; Two-dimensional materials; Ultra thin channels, Field effect transistors |
| Department/Centre: | Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
| Date Deposited: | 02 Dec 2021 12:51 |
| Last Modified: | 02 Dec 2021 12:51 |
| URI: | http://eprints.iisc.ac.in/id/eprint/70063 |
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