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Common mode disturbance tolerant broadband differential SPDT switch for Ka-band radar

Kumar, V and Govindarajan, SS and Selvaraja, SK (2021) Common mode disturbance tolerant broadband differential SPDT switch for Ka-band radar. In: IEICE Electronics Express, 18 (4).

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Official URL: https://doi.org/10.1587/ELEX.18.20200428


The proposed broadband fully differential single-pole double-throw (SPDT) switch for Ka-band radar with high 1-dB power compression point (P�1dB) and isolation is demonstrated using 0.13 µm SiGe BiCMOS technology. In contrast to traditional circuit, SPDT switch utilizes fully differential topology with virtual grounding, so it also offers cancellation to common mode disturbance. As a result, this SPDT switch will help in improving radar range due to its high P�1dB, high range-resolution and accuracy due to its broad-bandwidth. Further, this paper also introduces the use of asymmetrical tapered inductor in SPDT switch to improve layout area of SPDT switch with normal spiral inductor. Measurement results of fabricated differential SPDT switch with conventional layout has demonstrated a minimum insertion loss of 2.9 dB and an isolation of �39 dB in 25 GHz to 40 GHz frequency-band, and input P�1dB of 12.6 dBm at 34 GHz with 0.47 mm2 area. EM simulation results of compact differential SPDT switch with symmetrically tapered inductor in layout has demonstrated minimum insertion loss of 1.8 dB and isolation of -39 dB in same frequency-band, input P�1dB of 14.1 dBm at 34 GHz with 0.11 mm2 area. © 2021 The Institute of Electronics, Information and Communication Engineers

Item Type: Journal Article
Publication: IEICE Electronics Express
Publisher: Institute of Electronics Information Communication Engineers
Additional Information: The copyright for this article belongs to the IEICE.
Keywords: Bismuth alloys; Electric inductors; Insertion losses; Radar; Si-Ge alloys; Topology, Broad bandwidths; EM simulations; Fully differential; High range resolution; Power compression; SiGe BiCMOS technology; Single-pole double-throw switches; Spiral inductor, Semiconductor switches
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 04 Jul 2021 05:49
Last Modified: 04 Jul 2021 05:52
URI: http://eprints.iisc.ac.in/id/eprint/68746

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