Redox-Active Vanadium-Based Polyoxometalate as an Active Element in Resistive Switching Based Nonvolatile Molecular Memory

Sterin, NS and Basu, N and Cahay, M and Satyanarayan, MN and Mal, SS and Das, PP (2020) Redox-Active Vanadium-Based Polyoxometalate as an Active Element in Resistive Switching Based Nonvolatile Molecular Memory. In: Physica Status Solidi (A) Applications and Materials Science .

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Abstract

Resistive switching (RS)-based random access memory has been envisaged as a viable alternative to existing memory technology due to its nonvolatility, high switching speed, high endurance/retention, and considerably low operating voltage. Herein, a new uniform, repetitive, and stable RS phenomenon is demonstrated based on very low-cost two-terminal metal�insulator�metal stack fabricated using a highly redox-active vanadium-based polyoxometalate (POM) molecular clusters, V10O286��belonging to polyoxovanadate (POV) family. The RS is observed to be unipolar and nonvolatile in nature, and occur at a fairly low operating bias voltage (less than 2 V), making it suitable for low-power operations. The switching event is attributed to the cycling between formation and rupture of tiny conductive nanofilaments formed due to trapping and detrapping of positively charged ionized oxygen vacancy sites present in the active switching layer of V10O286�. POMs, in their rich abundance, are highly stable early transition-metal oxide nanosized clusters, capable of storing as well as releasing a large number of electrons. In addition, they can undergo fast and reversible redox reactions (both in solid and liquid electrolyte media) in �stepwise� manner�a property that makes them a promising candidate for ultrafast and multi-level nonvolatile molecular memory for high-density data storage. Preliminary investigations on the POV-based memory cells result in device resistance ratio �25, endurance for more than 200 cycles, and stable retention time around 2200 s, in fully open air condition.

Item Type:	Journal Article
Publication:	Physica Status Solidi (A) Applications and Materials Science
Publisher:	Wiley-VCH Verlag
Additional Information:	The copyright of this article belongs to Wiley-VCH Verlag
Keywords:	Electrolytes; Nonvolatile storage; Polyoxometalates; Redox reactions; Switching; Transition metal oxides; Vanadium, Early transition metals; High density data storage; Low operating voltage; Low-power operation; Number of electrons; Open air conditions; Random access memory; Reversible redox reactions, Random access storage
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	17 Aug 2020 11:48
Last Modified:	17 Aug 2020 11:48
URI:	http://eprints.iisc.ac.in/id/eprint/66339

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