Ling, Zhi-Peng and Majumdar, Kausik and Sakar, Soumya and Mathew, Sinu and Zhu, Jun-Tao and Gopinadhan, K and Venkatesan, T and Ang, Kah-Wee (2016) Nickel-Phosphide Contact for Effective Schottky Barrier Modulation in Black Phosphorus P-Channel Transistors. In: International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), APR 25-27, 2016, Hsinchu, TAIWAN.
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Abstract
We demonstrate a new contact technology for realizing a near band edge contact Schottky barrier height (FB) in black phosphorus (BP) p- channel transistors. This is achieved via the use of high work function nickel (Ni) and thermal anneal to produce a novel nickelphosphide (Ni2P) alloy which enables a record low hole FB of 12 meV. The formation of reactive Ni2P/ BP contact was found to further improve the transmission probability as compared to the Ni/ BP contact. Moreover, the penetration of Ni2P in the source and drain regions could additionally reduce the parasitic series resistance, leading to drive current improvement.
Item Type: | Conference Proceedings |
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Series.: | International Symposium on VLSI Technology Systems and Applications-Proceedings of the Technical Papers |
Additional Information: | Copy right for this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA |
Department/Centre: | Division of Electrical Sciences > Electrical Communication Engineering |
Date Deposited: | 04 Jan 2017 04:56 |
Last Modified: | 04 Jan 2017 04:56 |
URI: | http://eprints.iisc.ac.in/id/eprint/55718 |
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