Nickel-Phosphide Contact for Effective Schottky Barrier Modulation in Black Phosphorus P-Channel Transistors

Ling, Zhi-Peng and Majumdar, Kausik and Sakar, Soumya and Mathew, Sinu and Zhu, Jun-Tao and Gopinadhan, K and Venkatesan, T and Ang, Kah-Wee (2016) Nickel-Phosphide Contact for Effective Schottky Barrier Modulation in Black Phosphorus P-Channel Transistors. In: International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), APR 25-27, 2016, Hsinchu, TAIWAN.

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Abstract

We demonstrate a new contact technology for realizing a near band edge contact Schottky barrier height (FB) in black phosphorus (BP) p- channel transistors. This is achieved via the use of high work function nickel (Ni) and thermal anneal to produce a novel nickelphosphide (Ni2P) alloy which enables a record low hole FB of 12 meV. The formation of reactive Ni2P/ BP contact was found to further improve the transmission probability as compared to the Ni/ BP contact. Moreover, the penetration of Ni2P in the source and drain regions could additionally reduce the parasitic series resistance, leading to drive current improvement.

Item Type:	Conference Proceedings
Series.:	International Symposium on VLSI Technology Systems and Applications-Proceedings of the Technical Papers
Additional Information:	Copy right for this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	04 Jan 2017 04:56
Last Modified:	04 Jan 2017 04:56
URI:	http://eprints.iisc.ac.in/id/eprint/55718

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