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Electron paramagnetic resonance study of porous silicon

Bhat, SV and Victor, D and Muthu, S and Sood, AK and Jayaram, K (1992) Electron paramagnetic resonance study of porous silicon. In: Applied Physics Letters, 60 (17). pp. 2116-2117.

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Electron paramagnetic resonance studies under ambient conditions of boron‐doped porous silicon show anisotropic Zeeman (g) and hyperfine (A) tensors, signaling localization of the charge carriers due to quantum confinement.

Item Type: Journal Article
Publication: Applied Physics Letters
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 27 Dec 2011 07:36
Last Modified: 27 Dec 2011 07:36
URI: http://eprints.iisc.ac.in/id/eprint/42908

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