Bhat, SV and Victor, D and Muthu, S and Sood, AK and Jayaram, K (1992) Electron paramagnetic resonance study of porous silicon. In: Applied Physics Letters, 60 (17). pp. 2116-2117.
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Abstract
Electron paramagnetic resonance studies under ambient conditions of boron‐doped porous silicon show anisotropic Zeeman (g) and hyperfine (A) tensors, signaling localization of the charge carriers due to quantum confinement.
| Item Type: | Journal Article |
|---|---|
| Publication: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| Additional Information: | Copyright of this article belongs to American Institute of Physics. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 27 Dec 2011 07:36 |
| Last Modified: | 27 Dec 2011 07:36 |
| URI: | http://eprints.iisc.ac.in/id/eprint/42908 |
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