Single‐gate deep level transient spectroscopy technique

Pandian, V and Kumara, V (1990) Single‐gate deep level transient spectroscopy technique. In: Journal of Applied Physics, 67 (1). pp. 560-563.

PDF Gate.pdf - Published Version Restricted to Registered users only Download (511kB) | Request a copy

Abstract

A new deep level transient spectroscopy technique is suggested which allows the deep level parameters to be obtained from a single temperature scan. Using large ratio t2/t1 of the measurement gate positions t1 and t2 and analyzing the steep high‐temperature side of the peak, it is demonstrated that the deep level activation energy can be determined with high accuracy.

Item Type:	Editorials/Short Communications
Publication:	Journal of Applied Physics
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	12 Jan 2011 11:45
Last Modified:	12 Jan 2011 11:45
URI:	http://eprints.iisc.ac.in/id/eprint/34954

Actions (login required)

View Item