Pandian, V and Kumara, V (1990) Single‐gate deep level transient spectroscopy technique. In: Journal of Applied Physics, 67 (1). pp. 560-563.
![]() |
PDF
Gate.pdf - Published Version Restricted to Registered users only Download (511kB) | Request a copy |
Official URL: http://jap.aip.org/resource/1/japiau/v67/i1/p560_s...
Abstract
A new deep level transient spectroscopy technique is suggested which allows the deep level parameters to be obtained from a single temperature scan. Using large ratio t2/t1 of the measurement gate positions t1 and t2 and analyzing the steep high‐temperature side of the peak, it is demonstrated that the deep level activation energy can be determined with high accuracy.
Item Type: | Editorials/Short Communications |
---|---|
Publication: | Journal of Applied Physics |
Publisher: | American Institute of Physics |
Additional Information: | Copyright of this article belongs to American Institute of Physics. |
Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
Date Deposited: | 12 Jan 2011 11:45 |
Last Modified: | 12 Jan 2011 11:45 |
URI: | http://eprints.iisc.ac.in/id/eprint/34954 |
Actions (login required)
![]() |
View Item |