Surfactant-mediated growth of ultrathin Ge and Si films and their interfaces: Interference-enhanced Raman study

Kanakaraju, S and Sood, AK and Mohan, S (2000) Surfactant-mediated growth of ultrathin Ge and Si films and their interfaces: Interference-enhanced Raman study. In: Phys. Rev. B, 61 (12). 8334 -8340.

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Abstract

We report on the growth and interfaces of ultrathin polycrystalline Ge and Si films when they are grown on each other using ion beam sputter deposition with and without surfactant at different growth temperatures, studied using interference enhanced Raman spectroscopy. Ge films grown on Si without surfactant show Ge segregation at the interfaces forming an alloy of GexSi1-x as indicated by the Ge-Si Raman mode. However, use of Sb as surfactant strongly suppresses the intermixing. Also Si films grown on Ge have been observed to crystallize at low-substrate temperatures in the presence of the surfactant. In contrast to the growth of Ge on Si, the intermixing in the growth of Si on Ge is observed to be negligibly small even without the surfactant layer.

Item Type:	Journal Article
Publication:	Phys. Rev. B
Publisher:	The American Physical Society
Additional Information:	Copyright for this article belongs to American Physical Society (APS)
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics Division of Physical & Mathematical Sciences > Physics
Date Deposited:	26 Jul 2004
Last Modified:	19 Sep 2010 04:14
URI:	http://eprints.iisc.ac.in/id/eprint/1192

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