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Number of items: 6.

Gupta, Satyendra Nath and Singh, Anjali and Pal, Koushik and Muthu, D V S and Shekhar, C and Elghazali, Moaz A and Naumov, Pavel G and Medvedev, Sergey A and Felser, C and Waghmare, U V and Sood, A K (2018) Pressure-induced Lifshitz and structural transitions in NbAs and TaAs: experiments and theory. In: JOURNAL OF PHYSICS-CONDENSED MATTER, 30 (18).

Gupta, Satyendra Nath and Singh, Anjali and Pal, Koushik and Muthu, D V S and Shekhar, C and Qi, Yanpeng and Naumov, Pavel G and Medvedev, Sergey A and Felser, C and Waghmare, U V and Sood, A K (2018) Pressure-induced Lifshitz transition in NbP: Raman, x-ray diffraction, electrical transport, and density functional theory. In: PHYSICAL REVIEW B, 97 (6).

Pal, Banabir and Singh, Anjali and Sharada, G and Mahale, Pratibha and Kumar, Abhinav and Thirupathaiah, S and Sezen, H and Amati, M and Gregoratti, Luca and Waghmare, Umesh V and Sarma, DD (2017) Chemically exfoliated MoS2 layers: Spectroscopic evidence for the semiconducting nature of the dominant trigonal metastable phase. In: PHYSICAL REVIEW B, 96 (19).

Bera, Achintya and Singh, Anjali and Muthu, D V S and Waghmare, U V and Sood, A K (2017) Pressure-dependent semiconductor to semimetal and Lifshitz transitions in 2H-MoTe2: Raman and first-principles studies. In: JOURNAL OF PHYSICS-CONDENSED MATTER, 29 (10).

Gupta, Satyendra Nath and Singh, Anjali and Pal, Koushik and Chakraborti, Biswanath and Muthu, D V S and Waghmare, U V and Sood, A K (2017) Raman anomalies as signatures of pressure induced electronic topological and structural transitions in black phosphorus: Experiments and theory. In: PHYSICAL REVIEW B, 96 (9).

Chakraborty, Biswanath and Gupta, Satyendra Nath and Singh, Anjali and Kuiri, Manabendra and Kumar, Chandan and Muthu, DVS and Das, Anindya and Waghmare, UV and Sood, AK (2016) Electron-hole asymmetry in the electron-phonon coupling in top-gated phosphorene transistor. In: 2D MATERIALS, 3 (1).

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