Number of items: 2.
Journal Article
Joshi, V and Dutta Gupta, S and Roy Chaudhuri, R and Shrivastava, M
(2021)
Physical Insights into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs - Part i.
In: IEEE Transactions on Electron Devices, 68
(1).
pp. 72-79.
Dutta Gupta, S and Joshi, V and Roy Chaudhuri, R and Shrivastava, M
(2021)
Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors.
In: Journal of Applied Physics, 130
(1).
This list was generated on Sat Apr 27 09:05:24 2024 IST.
