Number of items: 2.
Chaudhuri, RR and Joshi, V and Gupta, SD and Shrivastava, M
(2020)
Interaction of hot electrons with Carbon doped GaN buffer in AlGaN/GaN HEMTs: Correlation with lateral electric field and device failure.
In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 13 - 18 September 2020, Virtual, Online, pp. 341-344.
Kranthi, NK and Kumar, BS and Salman, A and Boselli, G and Shrivastava, M
(2019)
Performance and Reliability Co-design of LDMOS-SCR for Self-Protected High Voltage Applications On-Chip.
In: 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019, 19 May 2019-23 May 2019, Shanghai, pp. 407-410.
This list was generated on Mon May 6 09:22:30 2024 IST.
