|
 | Up a level |
Soman, R and Raghavan, S and Bhat, N (2018) Normally off AlGaN/GaN FinFET devices on Si substrate. In: 4th IEEE International Conference on Emerging Electronics, ICEE 2018, 17 - 19 December 2018, Bengaluru.
Soman, R and Sharma, M and Ramesh, N and Nath, D and Muralidharan, R and Bhat, KN and Raghavan, S and Bhat, N (2018) (Invited) GaN Buried Channel Normally Off MOSHEMT: Design Optimization and Experimental Integration on Silicon Substrate. In: Symposium on High Purity and High Mobility Semiconductors 15 - AiMES 2018, ECS and SMEQ Joint International Meeting, 30 September - 4 October 2018, Cancun, pp. 161-168.
Solanke, SV and Soman, R and Rangarajan, M and Raghavan, S and Nath, DN (2021) UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction. In: Sensors and Actuators, A: Physical, 317 .
