Up a level |
Sanjay, S and Arackal, S and Paruthi, A and Bhat, N (2024) Sub-1 V Threshold Switching in Microwave-Assisted Solvothermal Nickel Ferrite Films and Its Application for Steep Switching MoS2-Phase FETs. In: ACS Applied Materials and Interfaces .
Rao, A and Sanjay, S and Dey, V and Ahmadi, M and Yadav, P and Venugopalrao, A and Bhat, N and Kooi, B and Raghavan, S and Nukala, P (2023) Realizing avalanche criticality in neuromorphic networks on a 2D hBN platform. In: Materials Horizons, 10 (11). 5235 -5245.
Sanjay, S and Ganapathi, KL and Varrla, E and Bhat, N (2021) Performance tunability of field-effect transistors using MoS2(1-x)Se2xalloys. In: Nanotechnology, 32 (43).
Sanjay, S and Hossain, M and Rao, A and Bhat, N (2021) Super-Nernstian ion sensitive field-effect transistor exploiting charge screening in WSe2/MoS2 heterostructure. In: npj 2D Materials and Applications, 5 (1).
Sanjay, S and Sahoo, K and Bhat, N (2020) Alcohol-Based Sulfur Treatment for Improved Performance and Yield in Local Back-Gated and Channel-Length-Scaled MoS FETs. In: IEEE Transactions on Electron Devices, 67 (9). pp. 3711-3715.
Mohta, N and Mech, RK and Sanjay, S and Muralidharan, R and Nath, DN (2020) Artificial Synapse Based on Back-Gated MoS2 Field-Effect Transistor with High-k Ta2O5 Dielectrics. In: Physica Status Solidi (A) Applications and Materials Science .