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Sahoo, K and Sen, P and Bhat, N (2018) Low Actuation Voltage Nano-Electro-Mechanical Switching Device for Ultra-Low Power Applications. In: 4th IEEE International Conference on Emerging Electronics, ICEE 2018, 17-19 December 2018, Bengaluru.
Sahoo, K and Kumar, S (2024) Influence of surface and edge profile of a spinning disc on its atomization characteristics in direct drop mode. In: Chemical Engineering Science, 287 .
Sahoo, K and Kumar, S (2024) Influence of surface and edge profile of a spinning disc on its atomization characteristics in direct drop mode. In: Chemical Engineering Science, 287 .
Kumar, S and Sahoo, K (2023) Spinning Disc-Spinning Bowl Contactor. In: Industrial and Engineering Chemistry Research, 62 (12). pp. 5445-5448.
Sahoo, K (2022) The characteristic length scales in direct mode of drop formation from the edges of spinning discs with different surface wetting characteristics. In: Chemical Engineering Science, 263 .
Urs, KMB and Sahoo, K and Bhat, N and Kamble, V (2022) Complementary Metal Oxide Semiconductor-Compatible Top-Down Fabrication of a Ni/NiO Nanobeam Room Temperature Hydrogen Sensor Device. In: ACS Applied Electronic Materials, 4 (1). pp. 87-91.
Sahoo, K and Kumar, S (2021) Green synthesis of sub 10 nm silver nanoparticles in gram scale using free impinging jet reactor. In: Chemical Engineering and Processing - Process Intensification, 165 .
Sahoo, K and Kumar, S (2021) Atomization Characteristics of a Spinning Disc in Direct Droplet Mode. In: Industrial and Engineering Chemistry Research .
Sahoo, K and Kumar, S (2021) Dynamics of Drop Release from the Edge of a Spinning Disc. In: Industrial and Engineering Chemistry Research .
Sanjay, S and Sahoo, K and Bhat, N (2020) Alcohol-Based Sulfur Treatment for Improved Performance and Yield in Local Back-Gated and Channel-Length-Scaled MoS FETs. In: IEEE Transactions on Electron Devices, 67 (9). pp. 3711-3715.
Nittala, PVK and Sahoo, K and Bhat, N and Bhat, KN and Sen, P (2019) Effect of substrate transfer on performance of vertically stacked ultrathin MOS devices. In: IEEE Transactions on Electron Devices, 66 (3). pp. 1153-1159.
