Low Actuation Voltage Nano-Electro-Mechanical Switching Device for Ultra-Low Power Applications

Sahoo, K and Sen, P and Bhat, N (2018) Low Actuation Voltage Nano-Electro-Mechanical Switching Device for Ultra-Low Power Applications. In: 4th IEEE International Conference on Emerging Electronics, ICEE 2018, 17-19 December 2018, Bengaluru.

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Abstract

In this paper we propose a two-terminal diode type nano-electro-mechanical (NEM) switch with a low actuation voltage of about 2.5 V and sharp subthreshold slope of ∼ 2.4 mV/decade obtained by reducing the air gap between electrodes. This type of switch will find applications in non-volatile memory, NEM resonators and sensors.

Item Type:	Conference Paper
Publication:	2018 4th IEEE International Conference on Emerging Electronics, ICEE 2018
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the Institute of Electrical and Electronics Engineers Inc.
Keywords:	Atomic layer deposition; Digital storage; Nanosensors; NEMS, Electro-mechanical; Low actuation voltage; Low Power; Low voltage switch; Non-volatile memory; Subthreshold slope; Two terminals; Ultralow power application, Electromechanical actuators
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	30 Jul 2022 04:42
Last Modified:	30 Jul 2022 04:42
URI:	https://eprints.iisc.ac.in/id/eprint/75076

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