Easily reversible memory switching in Ge–As–Te glasses

Prakash, S and Asokan, S and Ghare, DB (1996) Easily reversible memory switching in Ge–As–Te glasses. In: Journal of Physics D: Applied Physics, 29 (7). pp. 2004-2008.

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Abstract

Electrical switching behaviour of melt-quenched $Ge_{10}As_{45}Te_{45}$ and $Ge_{10}As_{40}Te_{50}$ glasses have been studied in the I– V mode, using a constant current source with incremental current steps. The samples are found to stay in the high-resistance OFF state up to a critical voltage $V_c$ (corresponding to a critical current $I_c$). Above $V_c$, the sample switches to a low-resistance ON state with a stable negative resistance region, and lock-on to this state even if the current is reduced to zero. If the compliance voltage is turned off and switched on again, the switching transient introduced is found to reset the glasses back to the OFF state. The samples are found to switch again. The switching–resetting–switching cycle is repeated 50 times, with \pm10% variation in the switching voltages.

Item Type:	Journal Article
Publication:	Journal of Physics D: Applied Physics
Publisher:	Institute of Physics
Additional Information:	Copyright of this article belongs to Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	12 Dec 2006
Last Modified:	19 Sep 2010 04:33
URI:	http://eprints.iisc.ac.in/id/eprint/9075

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