Mandal, M and Roy, SK and Basu, K (2024) Improved Model for Accurate Prediction of Crosstalk-Induced Gate-Source Voltage Peaks of SiC MOSFET with SiC Schottky Diode in a Half-bridge Configuration. In: IEEE Journal of Emerging and Selected Topics in Power Electronics .
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Abstract
Fast switching transients of SiC MOSFETs reduce switching loss but generate high (dv/dt). During the active device's turn-on transition, high (dv/dt) increases the complementary device's gate-source voltage, potentially causing false turn-on, resulting in positive crosstalk. Conversely, during turn-off, the complementary device's gate-source voltage decreases, causing negative crosstalk. Negative gate voltage can limit positive crosstalk peaks below the threshold but may intensify negative crosstalk peaks, possibly exceeding safe ratings and impacting reliability of SiC MOSFETs. This article presents an improved model to accurately predict crosstalk-induced gate-source voltage peaks of SiC MOSFETs. SiC Schottky diodes are utilized to avoid the reverse recovery of SiC MOSFET's body diode. In addition to modeling nonlinear capacitances, parasitic inductances, and time-varying (dv/dt) from existing approaches, this article incorporates detailed channel current model and PCB parasitic capacitances for enhanced accuracy in predicting drain-source voltage gradient (dv/dt) of the active device and gate-source voltage peaks of the complementary device. Experimental results for two 1200V SiC MOSFETs from different manufacturers validate the proposed model. Using the model, optimal value of negative gate voltage and gate resistances are estimated to mitigate negative crosstalk and avoid false turn-on. Additionally, this article analyses post-false turn-on dynamics, providing critical insights into the process. © 2013 IEEE.
Item Type: | Journal Article |
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Publication: | IEEE Journal of Emerging and Selected Topics in Power Electronics |
Publisher: | Institute of Electrical and Electronics Engineers Inc. |
Additional Information: | The copyright for this article belongs to the Publisher. |
Keywords: | Gallium compounds; Junction gate field effect transistors; Organoclay; Photodissociation; PIN diodes; Schottky barrier diodes; Transient analysis, Crosstalk peak; False turn-on; MOS-FET; MOSFETs; Negative gate voltage design; Negative gate voltages; Parasitics; PCB parasitic; Silicon carbide; Switching transient; Switching transient analyze, MOSFET devices |
Department/Centre: | Division of Electrical Sciences > Electrical Engineering |
Date Deposited: | 29 Jan 2025 11:39 |
Last Modified: | 29 Jan 2025 11:39 |
URI: | http://eprints.iisc.ac.in/id/eprint/87339 |
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