Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer

Munshi, MA and Mir, MA and Joshi, V and Chaudhuri, RR and Malik, R and Shrivastava, M (2024) Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer. In: IEEE Transactions on Electron Devices .

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Abstract

This work investigates the temperature-dependent electrostatic discharge (ESD) behavior of AlGaN/GaN HEMTs using a transmission line pulsing system, which becomes relevant under practical system-level scenario. Two devices with different carbon doping concentrations in the buffer are tested. It is observed that in low-carbon-doped devices, breakdown/failure voltage ( textitVtextBD ) decreases with increasing temperature, while in the high-carbon-doped devices, textitVtextBD shows a weak temperature dependence. A unique behavior is identified where the location of the channel electric field peak determines the temperature-dependent ESD breakdown behavior of the GaN HEMT devices. When the channel electric field peaks at the field plate edge (FPE), textitVtextBD shows a negative temperature coefficient, whereas it shows a weaker temperature dependence when the channel electric field shifts to the drain edge (DE). In situ and on-the-fly electrical and optical characterizations, such as electroluminescence (EL) microscopy and micro-Raman spectroscopy, and TCAD computations are performed to get deeper insights into the failure mechanisms. Postfailure analysis using scanning electron microscopy and focused ion beam (FIB) microscopy is also carried out to probe material-level implications on the failure of LC and HC devices. © 1963-2012 IEEE.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to the publisher.
Keywords:	Aluminum gallium nitride; Aluminum nitride; Electric breakdown; Electroluminescence; Electrostatic devices; Electrostatic discharge; Gallium phosphide; High electron mobility transistors; III-V semiconductors; Semiconductor doping, AlGaN/GaN HEMTs; AlGaN/GaN-HEMT; Buffer trap; Doped devices; Electrostatic discharge; High-temperature reliability; Highest temperature; Hot holes; Inverse piezoelectric effects; Temperature dependent, Gallium nitride
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	26 Oct 2024 07:14
Last Modified:	26 Oct 2024 07:14
URI:	http://eprints.iisc.ac.in/id/eprint/86547

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